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US 2012/0074380 A1Published application
White light emitting diode
AssigneeChung Yuan Christian University
InventorsJyh-Shyang Wang, Wei-Jie Chen, Wei-Hsuan Lo, Ren-Hao Chen
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Abstract
A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared to conventional phosphor, can provide a white LED with better color rendering.
Claims10
A white light emitting diode (LED) comprising:
- a GaN multilayer structure, emitting a first wavelength of visible light;
- and
- a photon energy conversion layer, composing of II-VI semiconductor compounds including (ZnxCd1-x)(OySezTe1-y-z) doped with element of Group III, Group V or Group VII, wherein 0≦x, y, z≦1, the photon energy conversion layer emitting a second wavelength of visible light after absorbing said first wavelength of visible light, such that the first wavelength and the second wavelength are mixed and emit a white light, wherein the second wavelength is longer than the first wavelength.
A method for forming a white light emitting diode (LED), comprising:
- providing a GaN multi-layer structure, the GaN emitting a first wavelength of visible light;
- and
- forming a photon energy conversion layer on the GaN multi-layer structure, the photon energy conversion layer including II-VI semiconductor compounds of (ZnzCd1-z)(OySezTe1-y-z) doped with elements of Group III, Group V or Group VII, wherein 0≦x, y, z≦1, the photon energy conversion layer emitting a second wavelength of visible light after absorbing said first wavelength of visible light, such that the first wavelength and the second wavelength are mixed and emitted to a white light, wherein the second wavelength is longer than the first wavelength.
Dependencies are inferred from the claim text.