Semiconductor memory

A semiconductor integrated circuit device, comprising:

• a first interlayer insulating film formed over a semiconductor substrate;
• a first plug and a second plug formed in the first interlayer insulating film;
• a chalcogenide material film formed over the first interlayer insulating film and over the first plug such that a bottom surface of the chalcogenide material film is located over the first plug;
• an electrode formed over the chalcogenide material film;
• an insulating film formed over the electrode, over the first interlayer insulating film and over the second plug in order to cover a side surface of the chalcogenide material film, and formed of a different material from the first interlayer insulating film;
• a second interlayer insulating film formed over the insulating film and formed of a different material from the insulating film;
• a third plug formed in the second interlayer insulating film and in the insulating film, and connected to the electrode;
• and
• a fourth plug formed in the second interlayer insulating film and in the insulating film, and directly connected to the second plug.

A semiconductor integrated circuit device, comprising:

• a MISFET formed over a semiconductor substrate;
• a first interlayer insulating film formed over the semiconductor substrate in order to cover the MISFET;
• a first plug formed in the first interlayer insulating film and electrically connected to one of a source region of the MISFET or a drain region of the MISFET;
• a second plug formed in the first interlayer insulating film and electrically connected to the other of the source region or the drain region;
• a chalcogenide material film formed over the first interlayer insulating film and over the first plug such that a bottom surface of the chalcogenide material film is located over the first plug;
• an electrode formed over the chalcogenide material film;
• an insulating film formed over the electrode, over the first interlayer insulating film and over the second plug in order to cover a side surface of the chalcogenide material film, and formed of a different material from the first interlayer insulating film;
• a second interlayer insulating film formed over the insulating film and formed of a different material from the insulating film;
• a third plug formed in the second interlayer insulating film and in the insulating film, and connected to the electrode;
• and
• a fourth plug formed in the second interlayer insulating film and in the insulating film, and directly connected to the second plug.