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US 2012/0074367 A1Published application
Counter doping compensation methods to improve diode performance
AssigneeSanDisk 3D LLC
InventorsXiying Costa, Abhijit Bandyopadhyay, Kun Hou, Brian Le, Yung-Tin Chen
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Abstract
A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided.
Claims71
A method of forming a memory cell, the method comprising:
- forming a diode including a first region having a first conductivity type;
- counter-doping the diode to change the first region to a second conductivity type;
- and
- forming a memory element coupled in series with the diode.
1 more element
A method of forming a memory cell, the method comprising:
- forming a diode including a first region having a first conductivity type;
- counter-doping the first region to reduce trap effects along grain boundaries;
- and
- forming a memory element coupled in series with the diode.
1 more element
A memory cell comprising:
- a diode comprising a first region counter-doped from a first conductivity type to a second conductivity type;
- and
- a memory element coupled in series with the diode.
Dependencies are inferred from the claim text.