Method for fabricating submicron patterned sapphire substrate

Abstract

The present invention provides a method for fabricating a submicron patterned sapphire substrate to be able to apply in GaN light emitting diode. The method includes the following steps: forming an etching stop layer on a sapphire substrate; forming a photoresist layer on the etching stop layer; making a photo mask to contact with the photoresist layer; illuminating the photoresist layer with a beam of light by using the photo mask, and developing the photoresist layer to transfer a submicron pattern from the photo mask to the photoresist layer; etching the etching stop layer by using the photoresist layer with the submicron pattern as a mask to form a first etching stop layer; and etching the sapphire substrate with the first etching stop layer to acquire a submicron patterned sapphire substrate.

Dependencies are inferred from the claim text.