InP-Based Multi-Junction Photovoltaic and Optoelectronic Devices
AssigneeArizona Board of Regents, a body corporate of the State of AZ, acting for & on behalf of Arizona
InventorsYong-Hang Zhang, Ding Ding
Life of this patent
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Abstract
Lattice-matched II-VI (ZnCdHg)(SeTe) and III-V (InGaAsP) semiconductors grown on InP substrates can be used for preparing multi junction solar cells that can potentially reach efficiencies greater than 40% under one sun. For example, a semiconductor structure can be prepared comprising, an InP substrate; an optional InGaAsP building block formed over the InP substrate; an InP building block formed over either the InGaAsP building block, when present, or the InP substrate and at least one (ZnCdHg)(SeTe) building block formed over the InP building block.
Claims11
A semiconductor structure comprising,
- an InP substrate;
- an optional InGaAsP building block formed over and lattice matched or pseudomorphically strained to the InP substrate;
- an InP building block formed over and lattice matched or pseudomorphically strained to either (i) the InGaAsP building block, when present;
- or (ii) the InP substrate;
- at least one (ZnCdHg)(SeTe) building block formed over and lattice matched or pseudomorphically strained to the InP building block, wherein,
- when more than one (ZnCdHg)(SeTe) building block is present, each
- (ZnCdHg)(SeTe) building block has a different bandgap;
- and a tunnel diode between each of the building blocks.
Dependencies are inferred from the claim text.