Semiconductor device and method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsTea-Kwang Yu, Byung-Sup Shim, Yong-Kyu Lee, Bo-Young Seo, Yong-Tae Kim
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Abstract
A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.
Claims20
A method of fabricating a semiconductor device, comprising:
- providing a substrate having a memory block and a logic block;
- forming a dummy gate pattern on the memory block;
- subsequently forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other region of the dummy gate pattern;
- and
- forming a nonvolatile memory device electrically connected to the first region.
A method of fabricating a semiconductor device, comprising:
- providing a substrate having a memory block and a logic block;
- forming a dummy gate pattern on the memory block;
- subsequently forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern;
- forming a first interlayer dielectric layer covering the dummy gate pattern, the first region and the second region;
- forming a first electrode in the first interlayer dielectric layer as electrically connected to the first region;
- forming a pattern of phase change material on and in contact with the first electrode;
- and
- forming a second electrode on the pattern of phase change material.
The method of claim 14, wherein the forming of the first region comprises forming a first photoresist pattern on the substrate, wherein the first photoresist pattern exposes at least part of the dummy gate pattern, and implanting impurities into the substrate using the first photoresist pattern and the exposed part of the dummy gate pattern as a mask.
A method of fabricating a semiconductor device, comprising:
- forming a dummy gate pattern on a substrate, wherein the dummy gate pattern has the form of a gate electrode structure of a field effect transistor (FET) but is electrically isolated from any other electrical component in the semiconductor device;
- forming a bipolar junction transistor (BJT),
- wherein the forming of the BJT comprises, after the dummy gate pattern has been formed, forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other region of the dummy gate pattern;
- and
- forming a memory component, comprising phase change material, electrically connected to the first region, such that the BJT controls an operation of the memory component.
Dependencies are inferred from the claim text.