Plasma enhanced atomic layer deposition apparatus and the controlling method thereof

A plasma enhanced atomic layer deposition apparatus comprising:

• a first and second reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space;
• a partition plate alternatively switched to one of the reaction chambers and characterized by that if the partition plate is switched to the first reaction chamber, the first and the second reaction spaces thereof are separated and the first and the second reaction spaces of the second reaction chamber are communicated;
• or if the partition plate is switched to the second reaction chamber, the first and the second reaction spaces thereof are separated and the first and the second reaction spaces of the first reaction chamber are communicated;
• a first gas supply unit providing each of the first reaction spaces with a first process gas;
• a second gas supply unit providing each of the second reaction spaces with a second process gas;
• a purge gas supply unit providing each of the reaction chambers with a purge gas to purge the reaction chambers;
• and
• a pair of heating carriers respectively disposed in the plurality of reaction chambers, each of the heating carriers controlled to move between the first and second reaction spaces in a reciprocating manner.

A method for controlling a plasma enhanced atomic layer deposition (PEALD) apparatus comprising the steps of:

• providing a plasma enhanced atomic layer deposition apparatus comprising two reaction chambers and a partition unit, each of the reaction chambers having a heating carrier, a first reaction space provided with a first process gas, and a second reaction space provided with a second process gas to proceed a PEALD process, the partition unit configured to separate the first and the second reaction spaces of one of the reaction chambers while to communicate the first and the second reaction spaces of the other reaction chamber;
• providing each of the heating carriers with a substrate;
• positioning the partition unit into one of the reaction chamber to separate the first and the second reaction spaces thereof, and the other reaction chamber being a communicated one, wherein the substrate in the separated reaction chamber is located in the first reaction space thereof, while the substrate in the communicated reaction chamber is located in the second reaction space thereof;
• forming a thin film on each of the substrates by applying the PEALD process in the reaction chambers;
• moving the partition unit into the other reaction chamber, wherein the substrate in the separated reaction chamber is located in the first reaction space thereof, while the substrate in the communicated reaction chamber is located in the second reaction space thereof;
• and
• repeating the foregoing steps of forming and moving for a predetermined times.