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US 2012/0070582 A1Published application
Deposition of ternary oxide films containing ruthenium and alkali earth metals
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsSatoko GATINEAU, Julien GATINEAU, Christian DUSSARRAT
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Abstract
Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.
Claims9
A method for forming a ternary oxide film on one or more substrates;
- comprising:
- a) providing at least one substrate disposed in a reactor;
- b) introducing a ruthenium precursor in vapor form into the reactor;
- wherein the ruthenium precursor is selected from the group consisting of:
- ruthenium tetraoxide;
- ruthenium(ethylcyclopentadienyl)2;
- ruthenium(CO)3(1-methyl-1,4-cyclohexadiene);
- (ethylcyclopentadienyl)ruthenium(dimethylpentadienyl);
- and ruthenium(toluene)(1,4-cyclohexadiene);
- c) introducing an alkali earth metal precursor in vapor form into the reactor;
- wherein the alkali earth metal precursor is selected from the group consisting of Ca(iPr3Cp)2(THF)z;
- Sr(iPr3Cp)2(THF)z;
- Ba(iPr3Cp)2(THF)z;
- Ca(iPr3Cp)2(DME)z;
- Sr(iPr3Cp)2(DME)z;
- Ba(iPr3Cp)2(DME)z;
- Ca(iPr3Cp)2, Sr(iPr3Cp)2, Ba(iPr3Cp)2, Ca(tBu3Cp)2(THF)z;
- Sr(tBu3Cp)2(THF)z;
- Ba(tBu3Cp)2(THF)z;
- Ca(tBu3Cp)2(DME)z;
- Sr(tBu3Cp)2(DME)z;
- Ba(tBu3Cp)2(DME)z;
- Ca(tBu3CP)2, Sr(tBu3Cp)2, and Ba(tBu3Cp)2;
- and wherein 0≦z≦3
- d) depositing through an atomic layer deposition (ALD) process at least part of the ruthenium and alkali earth metal precursors to form a ternary oxide film on at least one of the substrates.
22 more elements
The method of claim 4, wherein the alkali earth metal precursor is a liquid at about 25° C.
The method of claim 8, where the solvent has a boiling point greater than about 100° C.
Dependencies are inferred from the claim text.