Selective etch chemistries for forming high aspect ratio features and associated structures
AssigneeMicron Technology, Inc.
InventorsMark Kiehlbauch, Ted Taylor
Life of this patent
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Abstract
An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
Claims20
A partially fabricated integrated circuit, comprising:
- an interlevel dielectric layer;
- a plurality of features defined between openings in the interlevel dielectric layer, each feature having sidewalls defined by immediately neighboring openings in the interlevel dielectric layer, wherein a width at a top of each of the features defines a top width and a minimum width of the features defines a bow width, wherein a bow ratio of the top width to the bow width is less than or equal to about 1.4:1;
- and
- a silicon and carbon-containing polymer film coating at least part of the sidewalls.
Dependencies are inferred from the claim text.