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US 2012/0068308 A1Published application
Semiconductor device and semiconductor device production method
AssigneesFujitsu Semiconductor Limited, Fujitsu Limited
InventorsMitsuaki Igeta, Takashi Suzuki
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a heat generating device, and a heat radiating part. The heat generating device is provided on the semiconductor substrate, and the heat radiating part is provided above the heat generating device. The heat radiating part is thermally coupled with the semiconductor substrate through at least one contact part.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- a heat generating device provided on the semiconductor substrate;
- and
- a heat radiating part provided above the heat generating device, wherein
- the heat radiating part is thermally coupled with the semiconductor substrate through at least one contact part.
2 more elements
A semiconductor device production method comprising:
- forming on a semiconductor substrate a first insulated region which insulates from the surroundings and a second insulated region inside of the first insulated region;
- implanting an impurity into the first insulated region to form a well;
- forming a heat generating device on the second insulated region inside of the well;
- forming a heat radiating part above the heat generating device through a first insulating layer;
- and
- using at least one via hole which is formed in the first insulating layer to form at least one contact part which thermally couples the heat radiating part and the well.
3 more elements
Dependencies are inferred from the claim text.