Magnetoresistive effect element and magnetic memory

Abstract

According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

Dependencies are inferred from the claim text.