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AssigneeInternational Business Machines Corporation
InventorsUnoh Kwon, Michael P. Chudzik, Ravikumar Ramachandran
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A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.
A method of forming a semiconductor structure comprising a first field effect transistor and a second field effect transistor, said method comprising:
A method of forming a semiconductor structure comprising a first field effect transistor and a second field effect transistor, said method comprising:
A semiconductor structure comprising a first field effect transistor and a second field effect transistor that are located on a semiconductor substrate comprising a semiconductor material, wherein said first field effect transistor comprises:
A semiconductor structure comprising a first field effect transistor and a second field effect transistor that are located on a semiconductor substrate comprising a semiconductor material, wherein said first field effect transistor comprises:
Dependencies are inferred from the claim text.