Nonvolatile semiconductor memory device and method for manufacturing the same

A nonvolatile semiconductor memory device, comprising:

• a memory region including
• a stacked structural body including a plurality of electrode films stacked alternately along a first direction with a plurality of inter-electrode insulating films,
• a semiconductor pillar piercing the stacked structural body in the first direction,
• a memory layer provided between the semiconductor pillar and each of the plurality of electrode films,
• an inner insulating film provided between the memory layer and the semiconductor pillar, and
• an outer insulating film provided between the memory layer and each of the plurality of electrode films;
• a non-memory region provided with the memory region along a second direction orthogonal to the first direction, the non-memory region including an inter-layer conductive unit provided at a position along the first direction being same as a position of at least one of the inter-electrode insulating films of the stacked structural body;
• and
• a separation member provided between the memory region and the non-memory region to electrically isolate the plurality of electrode films from the inter-layer conductive unit.

A method for manufacturing a nonvolatile semiconductor memory device, comprising:

• forming a stacked structural body on a major surface of a substrate in a first region on the major surface of the substrate and in a second region inside the first region, the stacked structural body including a plurality of first conductive films alternately stacked with a plurality of first films;
• forming a support member to support the plurality of first conductive films by making a trench along a stacking direction of the stacked structural body at a boundary between the first region and the second region to pierce through to a position lower than an upper face of the first conductive film of a lowermost level of the stacked structural body and by filling an insulating material into the trench;
• removing the plurality of first films in the second region;
• oxidizing the plurality of first conductive films in the second region;
• and
• making a through-hole to pierce in the stacking direction in the first region and forming an outer insulating film, a memory layer, and an inner insulating film in order on an inner wall of the through-hole.