US 2012/0068252 A1 · SEMICONDUCTOR MEMORY DEVICE

Abstract

According to one embodiment, a semiconductor memory device includes a substrate, a multilayer body, a semiconductor member and a charge storage layer. The multilayer body is provided on the substrate, with a plurality of insulating films and electrode films alternately stacked, and includes a first staircase and a second staircase opposed to each other. The semiconductor member is provided in the multilayer body outside a region provided with the first staircase and the second staircase, and the semiconductor member extends in stacking direction of the insulating films and the electrode films. The charge storage layer is provided between each of the electrode films and the semiconductor member. The each of the electrode films includes a first terrace formed in the first staircase, a second terrace formed in the second staircase and a bridge portion connecting the first terrace and the second terrace.

Claims12

Dependent claims

A semiconductor memory device comprising:

a substrate;
a multilayer body provided on the substrate, with a plurality of insulating films and electrode films alternately stacked, and including a first staircase and a second staircase opposed to each other;
a semiconductor member provided in the multilayer body outside a region provided with the first staircase and the second staircase, the semiconductor member extending in stacking direction of the insulating films and the electrode films;
and
a charge storage layer provided between each of the electrode films and the semiconductor member,
the each of the electrode films including:
a first terrace formed in the first staircase;
a second terrace formed in the second staircase;
and
a bridge portion connecting the first terrace and the second terrace.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device

Life of this patent

Semiconductor memory device

Life of this patent

Abstract

Claims12