Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration

Abstract

Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the electrode and the substrate, removing a portion of the self aligned contact stop layer over the electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, and transforming the upper portion of the metal into a dielectric layer. Embodiments also include forming a hardmask layer over the removable gate electrode to protect the electrode during silicidation in source/drain regions of the semiconductor device.

Dependencies are inferred from the claim text.