Semiconductor device and method for fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsYuichi YAMAZAKI, Makoto Wada, Tadashi Sakai
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.
Claims20
A semiconductor device, comprising:
- a catalytic metal film formed above a substrate;
- a graphene film formed on the catalytic metal film;
- a contact plug connected to the graphene film;
- and
- an adjustment film formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.
A method for fabricating a semiconductor device, comprising:
- forming a catalytic metal film above a substrate;
- forming a graphene film on the catalytic metal film;
- forming a contact plug connected to the graphene film;
- and
- forming an adjustment film that adjusts a Dirac point position in a same direction as a region connected to the contact plug with respect to a Fermi level in a region other than the region connected to the contact plug of a surface of the graphene film before the contact plug is formed.
A method for fabricating a semiconductor device, comprising:
- forming a catalytic metal film above a substrate;
- forming a graphene film on the catalytic metal film;
- forming, on the graphene film, an adjustment film that makes adjustments to move a Dirac point position on a surface of the graphene film when connected to the graphene film in a same direction as a moving direction of a Dirac point on the surface of the graphene film with respect to a Fermi level when a contact plug is connected to the graphene film;
- forming a dielectric film on the adjustment film;
- forming an opening until the surface of the graphene film is exposed from a surface of the dielectric film;
- and
- forming the contact plug to connect to the graphene film in the opening.
Dependencies are inferred from the claim text.