US 2012/0058641 A1Published application

Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces

AssigneeBASF SE

InventorsVijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan

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Abstract

An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Claims18

Dependent claims

An aqueous polishing agent, comprising:

solid polymer particles as an abrasive, finely dispersed in an aqueous phase,
a first organic non-polymeric compound as a hard complexing agent, dissolved in the aqueous phase, and
a second organic non-polymeric compound as a soft complexing agent, dissolved in the aqueous phase,
wherein the solid polymer particles are capable of interacting with a metal of, a metal oxide on top of, or a metal of and a metal oxide on top of a surface to be polished and capable of forming a strong complex with the metal of the surface to be polished,
the first organic non-polymeric compound is capable of interacting with the metal of, the metal oxide on top of, or both the metal of and the metal oxide on top of the surface to be polished, capable of forming a strong, water-soluble complex with the metal, and capable of causing an increase of a material removal rate MRR and a static etch rate SER of the surface to be polished with increasing concentration of the first organic non-polymeric compound in the aqueous polishing agent, and
the second organic non-polymeric compound is capable of interacting with the metal of, the metal oxide on top of, or both the metal of and the metal oxide on top of the surface to be polished, capable of forming a slightly soluble or insoluble complex with the metal of the surface to be polished, and capable of causing a lower increase of the material removal rate MRR than the first organic non-polymeric compound and a lower increase of the static etch rate SER than the first organic non-polymeric compound or no increase of the static etch rate SER of the metal surface to be polished with increasing concentration of the second organic non-polymeric compound in the aqueous polishing agent, and
wherein the slightly soluble or insoluble complex is capable of being absorbed by the metal surface to be polished.

4 more elements

A process for chemical and mechanical polishing of a patterned and unstructured metal surface, comprising:

preparing an aqueous polishing agent comprising solid polymeric particles as an abrasive finely dispersed in an aqueous phase, a first organic non-polymeric compound as a hard complexing agent dissolved in the aqueous phase, and a second organic non-polymeric compound as a soft complexing agent dissolved in the aqueous phase, and
chemically and mechanically polishing the metal surface
wherein the solid polymer particles are capable of strongly interacting with a metal of, a metal oxide on top of, or a metal of and a metal oxide on top of a surface to be polished and capable of forming a strong complex with the metal of the surface to be polished,
the first organic non-polymeric compound is capable of strongly interacting with the metal of, the metal oxide on top of, or both the metal of and the metal oxide on top of the surface to be polished, capable of forming strong, water-soluble complexes with the metal, and capable of causing an increase of a material removal rate MRR and a static etch rate SER of the surface to be polished with increasing concentration of the first organic non-polymeric compound in the aqueous polishing agent,
the second organic non-polymeric compound is capable of interacting with the metal of, the metal oxide on top of, or both the metal of and the metal oxide on top of the surface to be polished, capable of forming a slightly soluble or insoluble complex with the metal of the surface to be polished, and capable of causing a lower increase of the material removal rate MRR than the first organic non-polymeric compound and a lower increase of the static etch rate SER than the first organic non-polymeric compound or no increase of the static etch rate SER of the metal surface to be polished with increasing concentration of the second organic non-polymeric compound in the aqueous polishing agent, and
wherein the slightly soluble or insoluble complex is capable of being absorbed by the metal surface to be polished.

3 more elements

Dependencies are inferred from the claim text.