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US 2012/0058640 A1Published application
Method for forming an interconnect structure
AssigneeGlobalfoundries Inc.
InventorsRyoung-Han Kim, Matthew E. Colburn
Life of this patent
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Abstract
A method for forming an interconnect structure includes forming a mandrel above a base layer, forming spacers on the mandrel, forming recesses in the base layer using the spacers as an etch template, and forming a conductive material in the recesses.
Claims22
A method for forming an interconnect structure, comprising:
- forming a mandrel above a base layer;
- forming spacers on the mandrel;
- forming recesses in the base layer using the spacers as an etch template;
- and
- forming a conductive material in the recesses.
2 more elements
A method for forming an interconnect structure, comprising:
- forming a first mask layer above a dielectric layer;
- forming a mandrel above the first mask layer;
- forming spacers on the mandrel;
- forming a second mask layer above the mandrel;
- forming a block mask above the second mask layer patterned to expose selected regions of the second mask layer;
- etching the second mask layer selective to the spacers using the block mask as an etch template to remove portions of the mandrel and the second mask layer exposed by the block mask to define a first pattern in the second mask layer exposing the first mask layer;
- etching the first mask layer using the first pattern as an etch template to define a second pattern in the first mask layer exposing the dielectric layer;
- etching the dielectric layer using the second pattern as an etch template to define recesses therein;
- and
- forming a conductive material in the recesses.
7 more elements
Dependencies are inferred from the claim text.