Semiconductor device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorHiroshi Ohno
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Abstract
According to one embodiment, a semiconductor device manufacturing method comprises defining a region in which absorptance of light illuminated for annealing to a substrate on which a pattern of a semiconductor integrated circuit is formed is not larger than a preset value as a coarse pattern region, locally forming a thin film that enhances light absorptance on the coarse pattern region, and annealing the substrate by illuminating light onto the substrate on which the pattern of the integrated circuit and thin film are formed.
Claims18
A semiconductor device manufacturing method comprising:
- defining a region in which absorptance of light illuminated for annealing to a substrate on which a pattern of a semiconductor integrated circuit is formed is not higher than a preset value as a coarse pattern region,
- locally forming a thin film that enhances light absorptance on the coarse pattern region, and
- annealing the substrate by illuminating light onto the substrate on which the pattern of the integrated circuit and thin film are formed.
A semiconductor device manufacturing method comprising:
- defining one of a region in which a closest distance between gate patterns is not larger than 0.5 μm and a region in which an element isolation insulating film is formed on a substrate on which a pattern of a semiconductor integrated circuit is formed as a dense pattern region,
- defining a region other than the dense pattern region as a coarse pattern region,
- locally forming a thin film that enhances light absorptance on the coarse pattern region, and
- annealing the substrate by illuminating light onto the substrate on which the integrated circuit pattern and thin film are formed.
Dependencies are inferred from the claim text.