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US 2012/0058636 A1Published application
Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
AssigneesSamsung Electronics Co., Ltd., Cheil Industries Inc.
InventorsDong-Min KANG, Dongchan Bae, Kyoochul Cho, Baiksoon Choi, Seunghyun Ahn, Myungkook Park, Goun Kim
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Abstract
Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- forming a photoresist pattern on a substrate;
- and
- removing the photoresist pattern using a composition for removing a photoresist,
- wherein the composition for removing the photoresist comprises about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming an interlayer dielectric on a semiconductor substrate;
- fainting a conductive pad on the interlayer dielectric;
- sequentially forming a first passivation layer and a second passivation layer covering a portion of the interlayer dielectric and exposing a portion of the conductive pad;
- conformally forming a seed layer on substantially the entire surface of the semiconductor substrate on which the first passivation layer and the second passivation layer are formed;
- forming a photoresist pattern on the seed layer, wherein the photoresist pattern exposes a portion of the seed layer overlapping with the conductive pad;
- forming a barrier layer using a first plating process on a portion of the seed layer which is not covered with the photoresist pattern;
- forming a bump using a second plating process on the barrier layer and protruding above an upper surface of the photoresist pattern;
- removing the photoresist pattern using a composition for removing a photoresist, wherein the composition for removing a photoresist comprises about 70-75 wt % of dimethyl sulfoxide;
- about 15-25 wt % of N-methyl-2-pyrolidione (NMP);
- about 0.70-1.50 wt % of tetramethylammonium hydroxide;
- and about 1.5-5.0 wt % of an amine containing no hydroxyl group.
8 more elements
Dependencies are inferred from the claim text.