Exposure mask and method for manufacturing semiconductor device using the same
AssigneeHynix Semiconductor Inc.
InventorsJoo Kyoung SONG, Hyoung Soon Yune
Life of this patent
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Abstract
A method for manufacturing a semiconductor device comprises performing an exposing and developing process using an exposure mask including shading patterns and assistant patterns arranged in parallel to the shading patterns to prevent a scum phenomenon generated when a main pattern is formed in a cell region over a semiconductor substrate, thereby improving characteristics, reliability and yield of the semiconductor device. As a result, the method enables high-integration of the semiconductor device.
Claims12
A method for manufacturing a semiconductor device, the method comprising:
- forming a hard mask layer over a semiconductor substrate;
- and etching the hard mask layer with an exposure mask including line-shaped shading patterns and assistant features (AF) wherein the line-shaped shading patterns and the assistant features are arranged along substantially the same direction,
- wherein the assistant features each includes a line pattern and a space pattern, the line pattern and the space pattern each having a uniform pitch, and
- wherein the line pattern includes a first line pattern, a space pattern, and a second line pattern.
A method for manufacturing a semiconductor device, the method comprising:
- forming a hard mask layer over a semiconductor substrate;
- etching the hard mask layer with an exposure mask to form a hard mask pattern, the exposure mask including line-shaped shading patterns and assistant features (AF), wherein the line-shaped shading patterns and the assistant features are arranged along substantially the same direction;
- etching the semiconductor substrate with the hard mask pattern as a mask to form a trench;
- and
- filling the trench to form a device isolation film,
- wherein the assistant features each include a line pattern and a space pattern, a line pattern and a space pattern having a uniform pitch, and
- wherein the line pattern includes a first line pattern, a space pattern and a second line pattern.
Dependencies are inferred from the claim text.