Method of producing semiconductor device

A method of manufacturing a semiconductor device having a photodiode and a thin film transistor on a same substrate, the method comprising:

• (a) forming a first semiconductor layer for said photodiode and a second semiconductor layer for said thin film transistor on said substrate;
• (b) forming a gate insulating film that covers said first and second semiconductor layers;
• (c) forming a first gate electrode that covers a portion of said second semiconductor layer that becomes a channel region on said gate insulating film using a prescribed gate metal, and forming a shield section that covers a portion of said first semiconductor layer that becomes an intrinsic semiconductor region on said gate insulating film using said gate metal;
• (d) implanting a first conductive type impurity into said first and second semiconductor layers from above said gate insulating film to form a region where said first conductive type impurity is implanted in a region of said first semiconductor layer that is not covered by said shield section and to form a region where said first conductive type impurity is implanted in a region of said second semiconductor layer that is not covered by said first gate electrode;
• (e) forming a first resist having an opening that exposes a portion of said gate insulating film, which covers said first semiconductor layer, and implanting a second conductive type impurity from above said gate insulating film to form a second conductive type region in a region of said first semiconductor layer that is not covered by said shield section or said first resist;
• (f) forming a second resist that covers said second conductive type region of said first semiconductor layer and implanting said first conductive type impurity from above said gate insulating film to form a first conductive type region in a region of said first semiconductor layer that is not covered by said shield section or said second resist;
• and
• (g) removing said shield section.