Film-formed article and method of producing the same
AssigneeNikon Corporation
InventorsKoichiro IWAHORI, Makoto NAKAZUMI
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Abstract
Provided is a manufacturing method for manufacturing a film-formed article by using sputtering to form a film including a constituent element of a target on a substrate. The manufacturing method comprises setting a distance d between the target and the substrate in a range from 0.5 times to 1.5 times a mean free path of the constituent element in the sputtering gas.
Claims13
A manufacturing method for manufacturing a film-formed article by using sputtering to form a film including a constituent element of a target on a substrate, the manufacturing method comprising:
- setting a distance between the target and the substrate in a range from 0.5 times to 1.5 times a mean free path of the constituent element in the sputtering gas.
A manufacturing method for manufacturing a film-formed article by using sputtering to form a film including a constituent element of a target on a substrate, the manufacturing method comprising:
- with d [mm] representing distance between the target and the substrate and p [Pa] representing gas pressure between the target and the substrate, forming the film under conditions where dip is in a range from no less than 600 to no more than 800.
A film-formed article comprising:
- a substrate including organic material;
- and
- zinc oxide formed on the substrate and having n-type conduction, wherein
- the zinc oxide has electron mobility greater than or equal to 12 cm2/V.s.
A film-formed article comprising:
- a substrate including organic material;
- and
- zinc oxide formed on the substrate and having n-type conduction, wherein
- the zinc oxide has an average grain size (column diameter) greater than or equal to 30 nm.
Dependencies are inferred from the claim text.