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AssigneeSanken Electric Co., Ltd.
InventorsAkio IWABUCHI, Hironori Aoki
Estimating the term…
The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 10, an electron supply layer 12 is formed on a channel layer 11. A two-dimensional electron gas (2DEG) layer 13 is formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layer 13 between a source electrode 14 formed on the surface of the electron supply layer 12 and a drain electrode 15 that is formed on the same surface. A potential detection electrode 17 is arranged on the electron supply layer 12 between the gate electrode 16 and the source electrode 14. A resistor 18 having a sufficiently high resistance value makes the electric current flowing to the potential detection electrode 17 negligible relative to the drain current in operation.
A semiconductor device which includes a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer and a source electrode, a drain electrode and a gate electrode formed on the second semiconductor layer, and in which electrons flow between the source electrode and the drain electrode by way of a two-dimensional electron gas layer at the hetero-junction interface of the first semiconductor layer and the second semiconductor layer and a channel where the electrons flow is controlled for on and off by a voltage applied to the gate electrode, wherein
Dependencies are inferred from the claim text.