High aspect ratio capacitively coupled mems devices
AssigneeSTMicroelectronics S.r.l.
InventorsVenkatesh Mohanakrishnaswamy, Loi N. Nguyen
Life of this patent
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Abstract
A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.
Claims18
A micro electro-mechanical system, comprising:
- a substrate;
- a first suspended electrode having a first surface and a second surface, the first surface being transverse to the second surface;
- and
- a second suspended electrode including:
- a first extension having a first surface facing the first surface of the first suspended electrode, the first extension being separated from the substrate by the first electrode;
- and
- a second extension transverse to the first extension, the second extension having a second surface facing the second surface of the first suspended electrode, the second surface of the second extension separated from the first electrode by a first distance.
A device, comprising:
- a substrate;
- a first electrode suspended over the substrate, the first electrode having a top surface and a side surface;
- and
- a second electrode suspended over the substrate, the second electrode having a first and a second extension, the first extension being transverse to the second extension and extending over the top surface of the first electrode and the second extension being adjacent to the side surface of the first electrode, the first electrode being positioned between the first extension and the substrate.
Dependencies are inferred from the claim text.