Semiconductor device
AssigneePanasonic Corporation
InventorJunji HIRASE
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first transistor having a first conductivity type; and a second transistor having the first conductivity type and having a higher threshold voltage than the first transistor. The first transistor includes a first channel region having a second conductivity type, a first gate insulating film, a first gate electrode, and a first extension region having the first conductivity type. The second transistor includes a second channel region having the second conductivity type, a second gate insulating film, a second gate electrode, and a second extension region having the first conductivity type. The second extension region contains impurities for shallower junction. A junction depth of the second extension region is shallower than a junction depth of the first extension region.
Claims17
A semiconductor device comprising:
- a first transistor having a first conductivity type;
- and
- a second transistor having the first conductivity type and having a higher threshold voltage than the first transistor, wherein
- the first transistor includes
- a first channel region having a second conductivity type and formed in a first active region of a semiconductor substrate,
- a first gate insulating film provided on the first channel region of the first active region,
- a first gate electrode provided on the first gate insulating film, and
- a first extension region having the first conductivity type and formed in a part of the first active region which is located below a side of the first gate electrode,
- the second transistor includes
- a second channel region having the second conductivity type and formed in a second active region of the semiconductor substrate,
- a second gate insulating film provided on the second channel region of the second active region,
- a second gate electrode provided on the second gate insulating film, and
- a second extension region having the first conductivity type and formed in a part of the second active region which is located below a side of the second gate electrode,
- the second extension region contains impurities for shallower junction, and
- a junction depth of the second extension region is shallower than a junction depth of the first extension region.
Dependencies are inferred from the claim text.