Seminconductor device and fabrications thereof
AssigneeNanya Technology Corporation
InventorsWen-Ping Liang, Kuo-Hui Su
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Abstract
A semiconductor device is disclosed, including a substrate, a fin type semiconductor layer disposed on the substrate, a gate dielectric layer disposed on a top and sidewalls of the fin type semiconductor layer, a metal nitride layer disposed on the gate dielectric layer, and an aluminum doped metal nitride layer disposed on the metal nitride layer. In an embodiment of the invention, the metal nitride layer is a titanium nitride layer and the aluminum doped metal nitride layer is an aluminum doped titanium nitride layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a fin type semiconductor layer disposed on the substrate;
- a gate dielectric layer disposed on a top and sidewalls of the fin type semiconductor layer;
- a metal nitride layer disposed on the gate dielectric layer;
- and
- an aluminum doped metal nitride layer disposed on the metal nitride layer for preventing oxidation of the metal nitride layer.
A fin field effect transistor device, comprising:
- a fin type semiconductor layer;
- a gate structure wrapping around the fin type semiconductor layer, wherein the gate structure comprises a gate dielectric layer and a titanium nitride layer;
- and
- an oxidation barrier layer protecting the titanium nitride layer from oxidation, wherein the oxidation barrier layer comprises an aluminum doped titanium nitride layer.
A method for forming a semiconductor device, comprising:
- providing a substrate;
- forming a fin type semiconductor layer on the substrate;
- forming a gate dielectric layer on a top and sidewalls of the fin type semiconductor layer;
- forming a metal nitride layer on the gate dielectric layer;
- and
- forming an aluminum doped metal nitride layer on the metal nitride layer.
Dependencies are inferred from the claim text.