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US 2012/0056256 A1Published application
Semiconductor device and method for forming the same
AssigneeElpida Memory, Inc.
InventorNoriaki MIKASA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first semiconductor pillar, a second semiconductor pillar, and a first wiring. The first semiconductor pillar includes a first diffusion region. The second semiconductor pillar is adjacent to the first semiconductor pillar. The first wiring is positioned between the first and second semiconductor pillars. The first wiring has a first metal surface. The first metal surface has an ohmic contact with the first diffusion region.
Claims20
A semiconductor device comprising:
- a first semiconductor pillar including a first diffusion region;
- a second semiconductor pillar adjacent to the first semiconductor pillar;
- and
- a first wiring between the first and second semiconductor pillars, the first wiring having a first metal surface, the first metal surface having an ohmic contact with the first diffusion region.
1 more element
A semiconductor device comprising:
- a semiconductor substrate having a first groove, the first groove being defined by first and second side surfaces which face to each other;
- a first diffusion region in the semiconductor substrate;
- and
- a first wiring between the first and second side surfaces, the first wiring having a first metal surface having an ohmic contact with the first diffusion region.
1 more element
A semiconductor device comprising:
- a first pillar including a first conductivity type impurity;
- a first impurity region in a side region of the first pillar, the first impurity region including a second conductivity type impurity different in conductivity type from the first conductivity type impurity;
- a second impurity region on a top portion of the first pillar, the second impurity region including the second conductivity type impurity;
- a second pillar adjacent to the first pillar, the second pillar including the first conductivity type impurity;
- and
- a bit line between the first and second pillars, the bit line being in contact with the first impurity region, the bit line being in contact with the second pillar.
3 more elements
Dependencies are inferred from the claim text.