Semiconductor device
AssigneeInfineon Technologies AG
InventorsReinhold Spanke, Waleri Brekel, Ivonne Benzler
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.
Claims21
A semiconductor device comprising:
- a baseplate;
- a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate;
- a first and a second diode substrate coupled to the baseplate;
- a first, a second, and a third control substrate coupled to the baseplate;
- bond wires coupling the first and second IGBT substrates to the first control substrate;
- bond wires coupling the first and second IGBT substrates to the second control substrate via the first and second diode substrates;
- and
- bond wires coupling the first and second IGBT substrates to the third control substrate via the second diode substrate.
A chopper module comprising:
- a first control substrate;
- a second control substrate;
- a third control substrate;
- an insulated gate bipolar transistor (IGBT) leg coupled to the first control substrate;
- and
- a diode leg comprising contacts configured to couple the IGBT leg to the second control substrate and the third control substrate via the diode leg.
A method for fabricating a semiconductor device, the method comprising:
- providing a baseplate;
- attaching a first and a second insulated gate bipolar transistor (IGBT) substrate to the baseplate;
- attaching a first and a second diode substrate to the baseplate;
- attaching a first, a second, and a third control substrate to the baseplate;
- wire bonding the first IGBT substrate directly to the second IGBT substrate to provide a first control signal line;
- wire bonding the first IGBT substrate to the second IGBT substrate via the first diode substrate and the second diode substrate to provide a second control signal line;
- wire bonding the first IGBT substrate directly to the second IGBT substrate and wire bonding the second IGBT substrate directly to the second diode substrate to provide a third control signal line;
- wire bonding the first control signal line from the second IGBT substrate directly to the first control substrate;
- wire bonding the second control signal line from the second IGBT substrate directly to the second control substrate;
- and
- wire bonding the third control signal line from the second diode substrate directly to the third control substrate.
A semiconductor device comprising:
- a baseplate;
- a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate;
- a first and a second diode substrate coupled to the baseplate;
- a first, a second, and a third control substrate coupled to the baseplate,
- wherein the first diode substrate and the second diode substrate comprise used and unused control pads configured for electrically coupling the first IGBT substrate and the second IGBT substrate to the second control substrate and to the third control substrate.
Dependencies are inferred from the claim text.