Bidirectional silicon-controlled rectifier
OwnerWen-Yi CHEN, Ryan Hsin-Chin JIANG +1inventors
InventorsWen-Yi CHEN, Ryan Hsin-Chin JIANG, Ming-Dou KER
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Abstract
A bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect of a field oxide layer, which results in crystalline defects, a concentrated current and a higher magnetic field and then causes abnormal operation of a rectifier. Thereby, the present invention can also reduce signal loss.
Claims5
A bidirectional silicon-controlled rectifier comprising:
- a P-type substrate;
- an N-type epitaxial layer formed on said P-type substrate;
- an anode structure including:
- a first P-type doped area formed inside said N-type epitaxial layer;
- and
- a first semiconductor area and a second semiconductor area, wherein said first and second semiconductor area have opposite conduction types, are both arranged inside said first P-type doped area and are both connected to an anode;
- a cathode structure including:
- a second P-type doped area formed inside said N-type epitaxial layer;
- and
- a third semiconductor area and a fourth semiconductor area neighboring said first P-type doped area, wherein said third and fourth semiconductor areas have opposite conduction types, are both arranged inside said second P-type doped area and are both connected to a cathode;
- a field oxide layer formed over said N-type epitaxial layer and in between said anode structure and said cathode structure, wherein said second semiconductor area and said fourth semiconductor area neighbor said field oxide layer and are of an identical conduction type;
- and
- two floating gates respectively at two sides of said field oxide layer.
Dependencies are inferred from the claim text.