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US 2012/0056107 A1Published application
Uniformity control using ion beam blockers
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsDaniel DISTASO, Joseph C. OLSON, Frank SINCLAIR
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Abstract
An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.
Claims20
A method of ion implantation comprising:
- generating an ion beam;
- mass analyzing said ion beam;
- changing an energy of said ion beam from a first energy to a second energy after said mass analyzing;
- blocking a portion of said ion beam after said changing;
- and
- implanting said ion beam into a workpiece after said blocking.
3 more elements
An ion implanter comprising:
- an ion source that generates an ion beam;
- an ion beam energy adjustment unit downstream of said ion source;
- an end station downstream of said ion beam energy adjustment unit;
- and
- an ion beam blocker unit positioned between said ion beam energy adjustment unit and said end station, said ion beam blocker unit configured to block a portion of said ion beam.
2 more elements
An ion implanter comprising:
- a platen
- a plurality of blockers upstream of said platen;
- an ion beam energy adjustment unit upstream of said plurality of blockers;
- and
- a plurality of drive units, each of said drive units connected to one of said plurality of blockers and configured to translate one of said blockers in a first direction.
2 more elements
Dependencies are inferred from the claim text.