US 2012/0055788 A1 · TARGET FOR SPUTTERING

Abstract

A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and TiO2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.

Claims4

Dependent claims

(canceled)

Dependencies are inferred from the claim text.

Facts

Application

13/297,920Filed 16 Nov 2011

Priority

JP 2006-20593628 Jul 2006

Published

8 Mar 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

C23C 14/3414
Cathode assembly for sputtering apparatus, e.g. Target: metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
C23C 14/086
Oxides: of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 14/5806
After-treatment: thermal treatment
C23C
Coating metallic material

Target for sputtering

Life of this patent

Target for sputtering

Life of this patent

Abstract

Claims4