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US 2011/0304081 A1Published application
Method For Producing Semiconductor Wafers Composed Of Silicon
AssigneeSiltronic AG
InventorsMartin Weber, Werner Schachinger, Piotr Filar
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Abstract
Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.
Claims18
A method for producing silicon semiconductor wafers, comprising
- pulling a single crystal at a seed crystal from a melt having a free surface heated in a crucible;
- supplying heat to the center of the crucible bottom with a heating power which, in the course of a cylindrical section of the single crystal being pulled, is increased at least once to not less than 2 kW and is then decreased again;
- and
- slicing silicon semiconductor wafers from the pulled single crystal.
1 more element
Dependencies are inferred from the claim text.