High linearity cmos rf switch passing large signal and quiescent power amplifier current
AssigneeSkyworks Solutions, Inc.
InventorsDavid K. Homol, Ryan M. Pratt
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AssigneeSkyworks Solutions, Inc.
InventorsDavid K. Homol, Ryan M. Pratt
Estimating the term…
Disclosed are high linearity CMOS-based devices capable of passing large signal and quiescent power amplifier current for switching radio frequency (RF) signals, and methods for biasing such devices. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, a bias voltage applied to an isolated well of such a triple-well structure can be substantially tied to a source voltage coupled to source and drain, so as to yield desired performance features such as high amplification linearity even when the source voltage changes.
A circuit for amplifying radio frequency signals, the circuit comprising:
A tangible computer-readable medium having stored thereon computer-executable instructions that, if executed by one or more computing devices, cause the one or more computing devices to perform operations comprising:
A radio frequency switch, comprising:
A method for controlling amplification radio frequency signals, the method comprising:
A system for amplifying radio frequency signals, the system comprising:
Dependencies are inferred from the claim text.