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US 2011/0300720 A1Published application
Plasma treatment of substrates prior to deposition
AssigneeApplied Materials, Inc.
InventorsXinyu Fu, Jick M. Yu
Life of this patent
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AssigneeApplied Materials, Inc.
InventorsXinyu Fu, Jick M. Yu
Estimating the term…
A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.
A process for processing a substrate disposed in a vacuum processing chamber, comprising the steps of:
A pre-treatment process performed in a vacuum chamber including a support configured to support a substrate, comprising the steps of:
A method of forming a hydroxide film on a metal formed in a substrate supported in a vacuum chamber, comprising:
A method of treating a barrier layer, comprising the steps of:
The method of claim 16, wherein the barrier layer is formed on sidewalls of a hole through the dielectric layer and further comprising filling metal into the hole.
Dependencies are inferred from the claim text.