On-wafer crystallization for pure-silica-zeolite ultra low-k films
AssigneeThe Regents of the University of California
InventorsYushan YAN, Junlan Wang, Yan Liu, Rui Cai
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Abstract
An on-wafer crystallization method of spin-coating a silicon wafer with a low-k dielectric zeolite material which includes the steps of forming a synthesis solution; generating a nucleated precursor solution; spin-coating the nucleated precursor onto a substrate as a precursor film; and annealing the precursor film into a zeolite film.
Claims21
An on-wafer crystallization method of spin-coating a silicon wafer with a low-k dielectric zeolite material comprising:
- forming a synthesis solution;
- generating a nucleated precursor solution;
- spin-coating the nucleated precursor solution onto a substrate as a precursor film;
- and
- annealing the precursor film into a zeolite film.
An on-wafer crystallization method of spin-coating a silicon wafer with a low-k dielectric zeolite material comprising:
- generating a nucleated precursor solution from a synthesis solution;
- spin-coating the nucleated precursor solution onto a substrate as a precursor film;
- and
- annealing the precursor film into a zeolite film.
A method of forming a nucleated precursor solution for on-wafer crystallization for pure-silica-zeolite films comprising:
- preparing a synthesis solution;
- heating the synthesis solution at a temperature of approximately 50° C. to 120° C. for approximately 1 to 5 days and then to a temperature of approximately 80° C. to 150° C. for approximately 1 to 5 days to form a suspension of nuclei and crystals;
- and
- separating the nuclei from the crystals by centrifugation.
Dependencies are inferred from the claim text.