Process of forming an electronic device including a trench and a conductive structure therein

Abstract

A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor portion overlying the underlying doped region, wherein the semiconductor portion has a primary surface spaced apart from the underlying doped region. The process can further include forming a vertically-oriented conductive region extending from the primary surface towards the underlying doped region, forming a horizontally-oriented doped region adjacent to the primary surface, and forming a conductive electrode over, spaced-apart from, and electrically insulated from the vertically-oriented doped region. The process can still further include forming a gate electrode after forming the conductive electrode. The electronic device can include a transistor that includes the underlying doped region, the vertically-oriented conductive region, the horizontally-oriented doped region, and the gate electrode.

Dependencies are inferred from the claim text.