Photodiode semiconductor device and manufacturing method

A method for manufacturing a semiconductor device, comprising:

• forming a second semiconductor layer of a second conductivity type over a first semiconductor layer of a first conductivity type, the first and second semiconductor layers defining a pn junction of a photodiode;
• forming element-separating regions at least in the second semiconductor layer, the element-separating regions dividing the photodiode device into a plurality of adjoining photodiode regions;
• forming a conductive layer over the second semiconductor layer in a pattern of separated segments, respectively connected to outside peripheries of separate ones of the photodiode regions;
• forming a first mask layer in a region inside of the patterned conductive layer over the second semiconductor layer;
• forming a first insulating layer over the conductive layer and the first mask layer;
• performing a first etch to form an opening in the first insulating layer and expose at least portions of the first mask layer within the opening;
• and
• performing a second etch to remove the exposed portions of the first mask layer, including any part remaining on an outer periphery of the opening.

A method of manufacturing a semiconductor device, comprising:

• forming a first semiconductor layer of a first conductivity type;
• forming a second semiconductor layer of a second conductivity type over the first semiconductor layer, the first and second semiconductor layers defining a pn junction of a photodiode device;
• forming element-separating regions at least in the second semiconductor layer, the element-separating regions dividing the photodiode device into four photodiode region quadrants;
• forming a first conductive layer over the second semiconductor layer;
• patterning the first conductive layer into separated segments, respectively marginally located over and bordering outside edges of separate ones of the photodiode region quadrants;
• forming a first insulating layer over the patterned first conductive layer;
• and
• patterning the first insulating layer with an opening over at least central portions adjoining intersecting corners of the four photodiode region quadrants.