Exposure Apparatus Inspection Mask and Exposure Apparatus Inspection Method

An exposure apparatus inspection method comprising:

• forming a resist layer by irradiating a resist film formed on an inspection wafer with an exposure light reflected by an exposure apparatus inspection mask, the resist layer having a pattern based on a pattern of the exposure apparatus inspection mask;
• and
• measuring a position of the pattern of the resist layer,
• the exposure apparatus inspection mask including:
• a substrate having a major surface reflective to the exposure light;
• and
• a first pattern portion provided on the major surface,
• the first pattern portion including:
• a first lower layer provided on the major surface and including a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and being absorptive to the exposure light;
• and
• a plurality of first reflection layers provided on a side of the first lower layer opposite to the substrate, the plurality of first reflection layers being periodically arranged at the pitch along the first direction, exposing at least part of each of the plurality of first absorption layers, and having a reflectance for the exposure light higher than a reflectance for the exposure light of the first absorption layers.