Reticle defect inspection with model-based thin line approaches
AssigneeKLA-Tencor Corporation
InventorsRuifang Shi, Xiaochun Li
Life of this patent
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AssigneeKLA-Tencor Corporation
InventorsRuifang Shi, Xiaochun Li
Estimating the term…
Provided are novel inspection methods and systems for inspecting photomasks to identify various defects using a model-based approach and information obtained from modeled images. Modeled or simulation images are generated directly from test or reference images. Some examples include aerial images that represent expected patterns projected by a lithography system on a substrate as well as photoresist images that represent expected resist patterns. Test images are first represented as a band limited mask pattern, which may include only linear terms for faster image processing. This pattern is then used to construct a modeled image, which in turn is used to construct a model-based feature map. This map serves as a base for inspecting the original test images to identify photomask defects and may include information that allows differentiating between various feature types based on their lithographic significance and other characteristics.
A method for inspecting a photomask to identify lithographically significant defects, the method comprising:
(canceled)
A system for inspecting a photomask to identify lithographically significant defects comprising at least one memory and at least one processor configured to perform following operations:
Dependencies are inferred from the claim text.