Active matrix substrate and liquid crystal device

An active matrix substrate comprising a plurality of pairs of an inverted staggered type thin-film transistor and a pixel electrode arranged in array, the inverted staggered thin-film type transistor comprising a gate electrode and a gate insulating film sequentially formed on an insulative substrate, a channel layer comprising a crystalline semiconductor film and an amorphous semiconductor film sequentially formed on the gate insulating film, and a source electrode and a drain electrode formed on the channel layer with a space therebetween, wherein

• a source electrode side and/or a drain electrode side of the crystalline semiconductor film extends to an area located outside both the thin-film transistor and the gate electrode, and
• the active matrix substrate further comprises a metal light-shielding film formed, in a same layer as the gate electrode, between a contacting portion between the source electrode or a source line connected to the source electrode and the crystalline semiconductor film and the gate electrode and/or between a contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode.