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US 2011/0298456 A1Published application
Tunneling magneto-resistive sensors with buffer layers
AssigneeSeagate Technology LLC
InventorsBIN Lu, Qing He, Mark Covington, Yunhao Xu, Wei Tian
Life of this patent
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Abstract
In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
Claims20
A tunneling magneto-resistive (TMR) sensor comprising:
- a sensor stack positioned between a seed layer and a cap layer, wherein the seed layer includes a first buffer layer comprising a nickel alloy.
A sensor stack comprising:
- a top and bottom shield;
- and
- a seed layer positioned adjacent to the bottom shield and having a first buffer layer comprising a nickel alloy.
A tunneling magneto-resistive (TMR) sensor comprising:
- a seed layer having a layer that acts as both a magnetic buffer and a magnetic shield.
Dependencies are inferred from the claim text.