Yttrium contacts for germanium semiconductor radiation detectors

Abstract

A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 GΩ. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.

Dependencies are inferred from the claim text.