Semiconductor Device and Method of Forming Thermally Conductive Layer Between Semiconductor Die and Build-Up Interconnect Structure

A method of making a semiconductor device, comprising:

• providing a carrier;
• forming a thermally conductive layer having a plurality of openings over the carrier;
• providing a semiconductor die having a plurality of bumps formed over contact pads on the semiconductor die;
• mounting the semiconductor die over the thermally conductive layer so that the bumps are disposed within the openings in the thermally conductive layer;
• depositing an encapsulant over the semiconductor die and thermally conductive layer;
• removing the carrier;
• and
• forming a first interconnect structure over the encapsulant and semiconductor die, the bumps being electrically connected to the first interconnect structure.

A method of making a semiconductor device, comprising:

• providing a thermally conductive layer having a plurality of openings;
• mounting a semiconductor die having a plurality of bumps over the thermally conductive layer so that the bumps are disposed within the openings in the thermally conductive layer;
• depositing an encapsulant over the semiconductor die and thermally conductive layer;
• and
• forming a first interconnect structure over the encapsulant and semiconductor die, the bumps being electrically connected to the first interconnect structure.

A semiconductor device, comprising:

• a thermally conductive layer having a plurality of openings;
• a semiconductor die having a plurality of bumps mounted over the thermally conductive layer so that the bumps are disposed within the openings in the thermally conductive layer;
• an encapsulant deposited over the semiconductor die and thermally conductive layer;
• and
• a first interconnect structure formed over the encapsulant and semiconductor die, the bumps being electrically connected to the first interconnect structure.