Semiconductor Body with a Protective Structure and Method for Manufacturing the Same

A method for the production of a protective structure in a semiconductor body, comprising:

• production of a first and a second region of the semiconductor body that are comprised by the protective structure that have a first conductivity type and that are arranged spaced apart from each other in a third region of the semiconductor body having a second conductivity type such that a current flow is made possible from the first region to the second region for the limiting of a voltage difference between the first and the second region, wherein the semiconductor body comprises a deep well in which the third region is arranged, the third region is constructed as a first well and has a floating potential;
• and
• production of an insulator on the semiconductor body and an electrode on the insulator such that the electrode is completely encapsulated by insulating material.