US 2011/0298098 A1Published application

Expitaxial fabrication of fins for finfet devices

AssigneeIntel Corporation

InventorPeter L. D. Chang

Life of this patent

Estimating the term…

A fin for a finFET is described. The fin is a portion of a layer of material, where, another portion of the layer of material resides on a sidewall.

Dependent claims

An article of manufacture, comprising:

a fin for a FinFET, said fin being a portion of a layer of material, another portion of said layer of material residing on a sidewall.

Dependencies are inferred from the claim text.

H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D
Inorganic electric semiconductor devices

From the US filing history. Foreign family members aren’t listed.

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