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US 2011/0298091 A1Published application
Semiconductor device having capacitors
AssigneeFujitsu Semiconductor Limited
InventorHirotoshi Tachibana
Life of this patent
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Abstract
A capacitor is formed over a semiconductor substrate. The capacitor includes a lower electrode, a capacitor dielectric film and an upper electrode in this order recited, and has an area S equal to or larger than 1000 μm2 and L/S equal to or larger than 0.4 μm−1, where S is an area of a capacitor region in which the lower and upper electrodes face each other across the dielectric film, and L is a total length of a circumference line of the capacitor region.
Claims2
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a capacitor formed over the semiconductor substrate, comprising a lower electrode, a capacitor dielectric film and an upper electrode stacked in an order recited,
- wherein the upper electrode is included within the lower electrode as viewed in plan, and a plan shape of the upper electrode is a rectangle, and the upper electrode has an area S equal to or larger than 1000 μm2 and a length of shorter side W of the plan shape of the upper electrode is equal to or less than 5 μm.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a capacitor formed over the semiconductor substrate, comprising a lower electrode, a capacitor dielectric film and an upper electrode stacked in an order recited, the upper electrode being included within the lower electrode as viewed in plan, and the upper electrode comprising a plurality of patterns isolated from each other;
- an interlayer insulating film over the upper electrode;
- a conductive plug in the interlayer insulating film, the conductive plug being electrically connected to the upper electrode;
- and
- a wiring over the interlayer insulating film, the wiring being connected to the conductive plug.
3 more elements
Dependencies are inferred from the claim text.