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US 2011/0298089 A1Published application
Trench capacitor and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsRishikesh Krishnan, Michael P. Chudzik, Siddarth A. Krishnan
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Abstract
An improved trench capacitor and method of fabrication are disclosed. The trench capacitor utilizes a rare-earth oxide layer to reduce depletion effects, thereby improving performance of the trench capacitor.
Claims20
A trench capacitor comprising:
- a trench having an interior surface formed in a silicon substrate;
- a rare-earth oxide layer disposed on the interior surface of said trench;
- a dielectric layer disposed on the rare-earth oxide layer;
- and
- a conductive layer disposed on the dielectric layer.
2 more elements
A method of forming a trench capacitor, comprising:
- forming a trench in a silicon substrate;
- depositing a rare-earth oxide layer on the interior surface of the trench;
- depositing a dielectric layer on the rare-earth oxide layer;
- and
- depositing a conductive layer on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.