Faceted epi shape and half-wrap around silicide in s/d merged finfet
AssigneeToshiba America Electronic Components, Inc.
InventorsHirohisa Kawasaki, Chung-hsun Lin
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Abstract
FinFETs and methods of making. FinFETs are provided. The FinFET contains two or more fins over a semiconductor substrate; two or more epitaxial layers over side surfaces of the fins; and metal-semiconductor compounds over an upper surfaces of the epitaxial layers. The fin has side surfaces that are substantially vertical relative to the upper surface of the semiconductor substrate. The epitaxial layer has an upper surface that extends at an oblique angle with respect to the side surface of the fin. The FinFET can contain a contact over the metal-semiconductor compounds.
Claims20
A FinFET, comprising:
- two or more fins over a semiconductor substrate, the fin having side surfaces that are substantially vertical relative to the upper surface of the semiconductor substrate;
- two or more epitaxial layers over side surfaces of the fins, the epitaxial layer having an upper surface that extends at an oblique angle with respect to the side surface of the fin and does not extend above the upper surface of the fin;
- and
- metal-semiconductor compounds over the upper surfaces of the epitaxial layer.
A method of forming a FinFET, comprising:
- providing fins comprising semiconductor materials over a semiconductor substrate;
- forming epitaxial layers over side surfaces of the fins, the epitaxial layer having an upper surface that extends at an oblique angle with respect to the side surface of the fin;
- and
- forming metal-semiconductor compounds over the upper surface of the epitaxial layers.
A method of electrically connecting a fin to a contact, comprising:
- forming epitaxial layers over side surfaces of the fin, the epitaxial layer having an upper surface that extends at an oblique angle with respect to the side surface of the fin;
- forming metal-semiconductor compounds over the upper surface of the epitaxial layers;
- and
- forming the contact over the metal-semiconductor compounds.
Dependencies are inferred from the claim text.