Fin transistor structure and method of fabricating the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsZhijiong Luo, Haizhou Yin, Huilong Zhu
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Abstract
There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and an insulation material is formed between remaining portions of the fin and the substrate. Thereby, it is possible to reduce the current leakage while maintaining the advantages of body-tied structures.
Claims20
A fin transistor structure, comprising a fin formed on a semiconductor substrate, wherein
- a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and
- an insulation material is formed between remaining portions of the fin and the substrate.
A method of fabricating a fin transistor structure, comprising:
- forming a fin on a substrate, wherein a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and an insulation material is formed between remaining portions of the fin and the substrate;
- and
- fabricating the transistor structure based on the substrate with the fin.
Dependencies are inferred from the claim text.